According to foreign media reports, a research team under the Ulsan University of Science and Technology (UNIST) in South Korea has developed a new semiconductor device, which is optimized for the next generation of 6G era and autonomous driving, with low power consumption and non-volatile operating characteristics. The innovative device can also be integrated into a variable filter circuit that can regulate the center band, laying the foundation for more compact and energy-efficient communication devices.
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Journal Advanced Science
The team was co-led by Professor Myungsoo Kim of the Department of Electrical Engineering at the National Institute of Science and Technology in Ulsan, South Korea, and Professor Tae-Sik Yoon from the Graduate School of Semiconductor Materials and Devices Engineering. Co-developed non-volatile radio frequency (RF) switches based on vanadium oxide (VOx) for next-generation wireless communication systems. The paper was published in the journal Advanced Science.
RF switches are essential semiconductor components in modern wireless communication systems, such as autonomous systems, smartphones, VR, and AR. They control the flow of high-frequency signals within a circuit by connecting or disconnecting specific paths, allowing for reliable signal routing.